Test of the scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs
Abstract
We show that once the effects of valley splitting and intervalley scattering are incorporated, the two-parameter scaling theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures. The observed large enhancement of the conductance and the effective electron-electron interaction amplitude as the temperature is lowered are explained quantitatively.
- Publication:
-
Physical Review B
- Pub Date:
- November 2010
- DOI:
- arXiv:
- arXiv:0910.5510
- Bibcode:
- 2010PhRvB..82t1308P
- Keywords:
-
- 72.10.-d;
- 71.10.Ay;
- 71.30.+h;
- Theory of electronic transport;
- scattering mechanisms;
- Fermi-liquid theory and other phenomenological models;
- Metal-insulator transitions and other electronic transitions;
- Condensed Matter - Disordered Systems and Neural Networks
- E-Print:
- Phys. Rev. B 82, 201308(R) (2010)