Reversible fluorination of graphene: Evidence of a two-dimensional wide bandgap semiconductor
Abstract
We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10GΩ at room temperature. Electron transport in graphene fluoride is well described by variable range hopping in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than 100kΩ at room temperature. Our approach provides a pathway to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications.
- Publication:
-
Physical Review B
- Pub Date:
- May 2010
- DOI:
- 10.1103/PhysRevB.81.205435
- arXiv:
- arXiv:1005.0113
- Bibcode:
- 2010PhRvB..81t5435C
- Keywords:
-
- 73.63.-b;
- 73.61.Le;
- 72.15.Rn;
- 72.20.Ee;
- Electronic transport in nanoscale materials and structures;
- Other inorganic semiconductors;
- Localization effects;
- Mobility edges;
- hopping transport;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 7 pages, 5 figures, revtex, to appear in PRB