A study of the electronic structure of FeSe1 - xTex chalcogenides by Fe and Se K-edge x-ray absorption near edge structure measurements

Fe K-edge and Se K-edge x-ray absorption near edge structure (XANES) measurements are used to study the FeSe_{1 - x}Te_x electronic structure of chalcogenides. An intense Fe K-edge pre-edge peak due to Fe 1\mathrm {s}\to 3\rmd (and admixed Se/Te p states) is observed, showing substantial change with Te substitution and x-ray polarization. The main white line peak in the Se K-edge XANES due to Se 1\mathrm {s} \to 4\mathrm {p} transition appears similar to the one expected for Se^{2 -} systems and changes with Te substitution. Polarization dependence reveals that unoccupied Se orbitals near the Fermi level have predominant p_{x, y} character. The results provide key information on the hybridization of Fe 3d and chalcogen p states in the Fe-based chalcogenide superconductors.