AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio Lin, Yu-Syuan ; Lain, Yi-Wei ; Hsu, Shawn S. H. Abstract Publication: IEEE Electron Device Letters Pub Date: February 2010 DOI: 10.1109/LED.2009.2036576 Bibcode: 2010IEDL...31..102L