Evidence of a fully ballistic one-dimensional field-effect transistor: Experiment and simulation
Abstract
We report the experimental demonstration of quantum point contact (QPC) field-effect transistor (FET) with a voltage gain greater than 1 at 4.2 K. Using Landauer-Büttiker approach in mesoscopic physics, simulation results show that this transistor is a fully ballistic one-dimensional FET, and the mechanism leading to a high gain is explained. This work provides therefore a general basis for devising future ballistic FETs.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 2010
- DOI:
- Bibcode:
- 2010ApPhL..97w3505G
- Keywords:
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- ballistic transport;
- field effect transistors;
- quantum point contacts;
- 85.30.Tv;
- 85.35.Ds;
- 85.75.Hh;
- Field effect devices;
- Quantum interference devices;
- Spin polarized field effect transistors