Spin transport in germanium at room temperature
Abstract
Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent conductance at the Ni/Ge Schottky interface. We demonstrate electron spin transport and electrical extraction from the Ge layer at room temperature.
- Publication:
-
Applied Physics Letters
- Pub Date:
- October 2010
- DOI:
- 10.1063/1.3505337
- Bibcode:
- 2010ApPhL..97p2104S
- Keywords:
-
- aluminium compounds;
- electrodeposition;
- elemental semiconductors;
- gallium arsenide;
- germanium;
- III-V semiconductors;
- nickel;
- Schottky barriers;
- spin dynamics;
- spin polarised transport;
- 72.25.-b;
- 73.30.+y;
- Spin polarized transport;
- Surface double layers Schottky barriers and work functions