Improvement of electron injection in inverted bottom-emission blue phosphorescent organic light emitting diodes using zinc oxide nanoparticles
Abstract
We fabricated highly efficient iridium(III) bis[(4,6-di-fluorophenyl)-pyridinato-N,C2'] picolinate doped inverted bottom-emission blue phosphorescent organic light-emitting diodes, with an electron injection layer of zinc oxide (ZnO) nanoparticles (NPs). The ZnO NPs layer lowers the turn-on voltage by about 4 V and significantly enhances the efficiency. The device with ZnO NPs shows peak efficiencies of 16.5 cd/A and 8.2%, about three times higher than those of the device without ZnO NPs. Since the ZnO NPs layer has a wide band gap, good electron transporting properties and low work function, it can be utilized as an effective electron injection layer with good transparency.
- Publication:
-
Applied Physics Letters
- Pub Date:
- April 2010
- DOI:
- 10.1063/1.3400224
- Bibcode:
- 2010ApPhL..96o3306L
- Keywords:
-
- doping;
- II-VI semiconductors;
- nanoparticles;
- organic compounds;
- organic light emitting diodes;
- phosphorescence;
- transparency;
- wide band gap semiconductors;
- work function;
- zinc compounds;
- 85.60.Jb;
- Light-emitting devices