Conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers through selective oxidation
Abstract
The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 ° C . The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamond surface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2010
- DOI:
- 10.1063/1.3364135
- arXiv:
- arXiv:1001.5449
- Bibcode:
- 2010ApPhL..96l1907F
- Keywords:
-
- annealing;
- diamond;
- ion implantation;
- nitrogen;
- oxidation;
- vacancies (crystal);
- 61.72.jd;
- 81.65.Mq;
- 61.72.Cc;
- 81.05.ug;
- 61.72.up;
- Vacancies;
- Oxidation;
- Kinetics of defect formation and annealing;
- Other materials;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 3 figures