Electron cyclotron effective mass in indium nitride
Abstract
We report on cyclotron effective mass measurement in indium nitride epilayers grown on c-sapphire, using the thermal damping of Shubnikov-de-Haas oscillations obtained in the temperature range 2-70 K and under magnetic field up to 60 T. We unravel an isotropic electron cyclotron effective mass equal to 0.062±0.002m0 for samples having electron concentration near 1018 cm-3. After nonparabolicity and polaron corrections we estimate a bare mass at the bottom of the band equal to 0.055±0.002m0.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2010
- DOI:
- Bibcode:
- 2010ApPhL..96e2117G
- Keywords:
-
- band structure;
- effective mass;
- electron density;
- III-V semiconductors;
- indium compounds;
- polarons;
- semiconductor epitaxial layers;
- Shubnikov-de Haas effect;
- wide band gap semiconductors;
- 71.18.+y;
- 71.20.Nr;
- 73.21.-b;
- 73.61.Ey;
- 73.50.Jt;
- 72.20.My;
- Fermi surface: calculations and measurements;
- effective mass g factor;
- Semiconductor compounds;
- Electron states and collective excitations in multilayers quantum wells mesoscopic and nanoscale systems;
- III-V semiconductors;
- Galvanomagnetic and other magnetotransport effects;
- Galvanomagnetic and other magnetotransport effects