Optimization and Comparison of 4-Stage Inverter, 2-i/p NAND Gate, 2-i/p NOR Gate Driving Standard Load By Using Logical Effort
Application of logical effort on transistor-level analysis of 4-stage inverter, 2-i/p 4 stage NAND gate, and 2-i/p 4 stage NOR gate is presented. Logical effort method is used to estimate delay and to evaluate the validity of the results obtained by using logical effort. The tested gate topologies were 4-stage inverter, 2-i/p-4 stage NAND gate and, 2-i/p 4 stage NOR gate. The quality of the obtained estimates is validated by circuit simulation using T-SPICE for 1.8V, 180 nm technologies.
International Conference on Methods and Models in Science and Technology (ICM2ST-10)
- Pub Date:
- November 2010
- logic gates;
- Electronic circuits;
- Bipolar transistors