Thermopiezoelectric and Nonlinear Electromechanical Effects in Quantum Dots and Nanowires
Abstract
We report thermopiezoelectric (TPE) and nonlinear electromechanical (NEM) effects in quantum dots (QD) and nanowires (NW) analyzed with a model based on coupled thermal, electric and mechanical balance equations. Several representative examples of low dimensional semiconductor structures (LDSNs) are studied. We focus mainly on GaN/AlN QDs and CdTe/ZnTe NWs which we analyze for different geometries. GaN/AlN nano systems are observed to be more sensitive to thermopiezoelectric effects than those of CdTe/ZnTe. Furthermore, noticeable qualitative and quantitative variations in electromechanical fields are observed as a consequence of taking into account NEM effects, in particular in GaN/AlN QDs.
- Publication:
-
American Institute of Physics Conference Series
- Pub Date:
- January 2010
- DOI:
- 10.1063/1.3295434
- Bibcode:
- 2010AIPC.1199..327P
- Keywords:
-
- quantum dots;
- semiconductor materials;
- piezoelectricity;
- transmission electron microscopy;
- 73.21.La;
- 71.20.Nr;
- 77.84.Bw;
- 68.37.Lp;
- Quantum dots;
- Semiconductor compounds;
- Elements oxides nitrides borides carbides chalcogenides etc.;
- Transmission electron microscopy