Lattice distortions caused by spin interactions in a semiconductor in the vicinity of the insulator-metal phase transition
Abstract
A study of the electron spin resonance in Ge:As revealed that, in uncompensated semiconductors with shallow impurity levels, the insulator state is preserved near the insulator-metal phase transition because of the appearance of lattice distortions caused by interaction of spins localized on impurity atoms. We consider this effect as variation of the spin-Peierls transition. In Ge:As, this effect is manifested at carrier concentrations n = 3×1017-3.7×1017 cm-3. Owing to the random distribution of impurities in the Ge lattice, the properties of this transition differ from those of a similar transition in substances in which uncompensated spins are localized on constituent ions of the host lattice.
- Publication:
-
American Institute of Physics Conference Series
- Pub Date:
- January 2010
- DOI:
- 10.1063/1.3295560
- Bibcode:
- 2010AIPC.1199...73Z
- Keywords:
-
- impurity-defect interactions;
- phase transitions;
- metal-insulator boundaries;
- germanium;
- 71.55.Ak;
- 71.35.Lk;
- 71.30.+h;
- 61.72.uf;
- Metals semimetals and alloys;
- Collective effects;
- Metal-insulator transitions and other electronic transitions;
- Ge and Si