Electrostriction Coefficients of GaN, AlN, MgO and ZnO in the Wurtzite Structure from First-Principles
Abstract
First-principles calculations have been performed on wurtzite AlN, GaN, MgO and ZnO, with a view to obtaining electrostriction coefficients.
- Publication:
-
American Institute of Physics Conference Series
- Pub Date:
- January 2010
- DOI:
- 10.1063/1.3295559
- Bibcode:
- 2010AIPC.1199...71K
- Keywords:
-
- electromechanical effects;
- density functional theory;
- piezoelectric effects;
- Brillouin zones;
- 73.40.-c;
- 71.15.Mb;
- 77.65.Bn;
- 71.20.Nr;
- Electronic transport in interface structures;
- Density functional theory local density approximation gradient and other corrections;
- Piezoelectric and electrostrictive constants;
- Semiconductor compounds