Yttrium silicide films into Si(111) — Fabrication and properties

The formation of a thin layer of hexagonal Y Si _{2- x} phase on a single-crystal Si(111) substrate by implantation of 195 keV Y ions with a dose of 5×10 ¹⁶Y ⁺/cm ² at room temperature (RT) is investigated. The structural characterization of the as-implanted and annealed samples is performed using Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) pole figure and cross-sectional transmission electron microscopy (XTEM). The results show that the orientation relationship between the Y Si _{2- x} layer and Si substrate is Y Si _{2- x}(0 0 0 1)//Si(111) and Y Si _{2- x}[1 1 -2 0]//Si [110].