Nanoscale residual stress-field mapping around nanoindents in SiC by IR s-SNOM and confocal Raman microscopy
Abstract
- Publication:
-
Optics Express
- Pub Date:
- December 2009
- DOI:
- 10.1364/OE.17.022351
- Bibcode:
- 2009OExpr..1722351G