An electrically modifiable synapse array of resistive switching memory
Abstract
This paper describes the resistive switching of a cross-point cell array device, with a junction area of 100 nm × 100 nm, fabricated using ultraviolet nanoimprinting. A GdOx and Cu-doped MoOx stack with platinum top and bottom electrodes served as the resistive switching layer, which shows analog memory characteristics with a resistance ratio greater than 10. To demonstrate a neural network circuit, we operated the cell array device as an electrically modifiable synapse array circuit and carried out a weighted sum operation. This demonstration of cross-point arrays, based on resistive switching memory, opens the way for feasible ultra-high density synapse circuits for future large-scale neural network systems.
- Publication:
-
Nanotechnology
- Pub Date:
- August 2009
- DOI:
- 10.1088/0957-4484/20/34/345201
- Bibcode:
- 2009Nanot..20H5201C