The Influence of TiN Thickness and {SiO}_{2} Formation Method on the Structural and Electrical Properties of {TiN}/ {HfO}_{2}/{SiO}_{2} Gate Stacks
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- July 2009
- DOI:
- 10.1109/TED.2009.2021718
- Bibcode:
- 2009ITED...56.1548V