Noise of Reverse Biased Solar Cells

The non-destructive testing and analysis of single crystal silicon solar cell is the focal point of our research. The noise spectroscopy and I-V curve measurement of reverse biased pn junction provide information that is connected with solar cell reliability and that provide for not only local defect characterization. We propose a new electric solar cell model, as a base for an enhanced noise model, which is in accordance with the experimentally obtained I-V curves. We suggest the physical nature of an unconventional behavior in reverse I-V characteristics, which is typical for solar cells without apparent local avalanche breakdowns.