This paper presents the first results of the Monte Carlo analysis of the noise performance of Schottky barrier (SB) SOI MOSFETs, focusing our attention in saturation conditions. We analyze the influence of the applied gate bias and the barrier height over the different noise parameters. The main importance of this work lies in the innovation of the study, since this is the first time in the literature that the noise performance of SB-MOSFETs is analyzed by means of a 2D Monte Carlo simulator.
Noise and Fluctuations: 20th International Conference on Noise and Fluctuations (ICNF-2009)
- Pub Date:
- April 2009
- Noise processes and phenomena;
- Applications of Monte Carlo methods;
- Surface double layers Schottky barriers and work functions