In this paper, we present a review of recent results on Monte Carlo modeling of high-frequency noise in III-V four-terminal devices. In particular, a study of the noise behavior of InAlAs/InGaAs Double-Gate High Electron Mobility Transistors (DG-HEMTs), operating in common mode, and Velocity Modulation Transistors (VMT), operating in differential mode, has been performed taking as a reference a similar standard HEMT. In the DG-HEMT, the intrinsic P, R and C parameters show a modest improvement, but the extrinsic minimum noise figure NFmin reveals a significantly better extrinsic noise performance due to the lower resistances of the gate contact and the source and drain accesses. In the VMT, very high values of P are obtained since the transconductance is very small, while the differential-mode operation leads to extremely low values of R.
Noise and Fluctuations: 20th International Conference on Noise and Fluctuations (ICNF-2009)
- Pub Date:
- April 2009
- Noise processes and phenomena;
- Applications of Monte Carlo methods;
- Modulators and demodulators;
- discriminators comparators mixers limiters and compressors