Impurity Dispersion and Low-Frequency Noise in Nanoscale MOS Transistors
Abstract
To remedy small-geometry effects in nanoscale MOS transistors, e.g. drain induced barrier lowering, one uses δ-doping layers. The statistical variation of the atom's positions in ion-implanted δ-doping layers is denoted as "frozen noise," and is correlated with the low frequency noise. The temporal accumulation of variance from "frozen noise" produces 1/f noise.
- Publication:
-
Noise and Fluctuations: 20th International Conference on Noise and Fluctuations (ICNF-2009)
- Pub Date:
- April 2009
- DOI:
- 10.1063/1.3140449
- Bibcode:
- 2009AIPC.1129..273M
- Keywords:
-
- 72.70.+m;
- 85.30.Tv;
- 85.30.-z;
- Noise processes and phenomena;
- Field effect devices;
- Semiconductor devices