Predicting the ionization threshold for carriers in excited semiconductors
Abstract
A simple set of formulas are presented which allow prediction of the fraction of ionized carriers in an electron-hole-exciton gas in a photoexcited semiconductor. These results are related to recent experiments with excitons in single and double quantum wells.
- Publication:
-
Solid State Communications
- Pub Date:
- April 2008
- DOI:
- 10.1016/j.ssc.2008.01.012
- arXiv:
- arXiv:0709.1415
- Bibcode:
- 2008SSCom.146...73S
- Keywords:
-
- Condensed Matter - Other Condensed Matter
- E-Print:
- doi:10.1016/j.ssc.2008.01.012