Size effect on I- V characteristics of low dimensional metal-semiconductor heterojunctions
Abstract
Cu-Se heterostructures of diameter 20, 100 and 200 nm were synthesized by electrodeposition within the pores of anodic alumina membranes (AAM) via template synthesis. The morphology of heterostructures was characterized by scanning electron microscope (SEM). The collective I- V characteristics of heterojunctions were measured at room temperature (25 °C) and the characteristics were observed to be like those of resonating tunneling diodes (RTDs) and peak-to-valley current ratio was found to reduce with decreasing diameter of RTDs.
- Publication:
-
Physica E Low-Dimensional Systems and Nanostructures
- Pub Date:
- January 2008
- DOI:
- 10.1016/j.physe.2007.08.136
- Bibcode:
- 2008PhyE...40..591S
- Keywords:
-
- 81.07.-b;
- 73.40.Gk;
- Nanoscale materials and structures: fabrication and characterization;
- Tunneling
