Polarization fields in (Zn,Cd)O/ZnO quantum well structures
Abstract
The presence of polarization-induced electric fields of some 108V/m in (Zn,Cd)O/ZnO quantum well structures is uncovered by a low-energy shift of the photoluminescence of several 100meV as well as a dramatic increase of the lifetime from the sub-ns to the 100μs time scale when the well width increases from 1.2 to 5.4nm . Effective screening of these fields by photogenerated carriers occurs already at moderate optical excitation in the 10kW/cm2 range.
- Publication:
-
Physical Review B
- Pub Date:
- March 2008
- DOI:
- 10.1103/PhysRevB.77.113312
- Bibcode:
- 2008PhRvB..77k3312K
- Keywords:
-
- 78.67.De;
- 78.66.Hf;
- 73.21.Fg;
- Quantum wells;
- II-VI semiconductors;
- Quantum wells