The study of the radiative lifetimes of 3 pnd1F 3 and 3 pnd3D 3 of Si I
Abstract
The energy levels and lifetimes of 3 pnd1F 3 ( n = 3-15) and 3 pnd3D 3 ( n = 3-18) of neutral silicon are calculated and predicted by means of the multichannel quantum defect theory (MQDT). In addition, this paper corrects the assignment mistakes of 3 pnd1F 3, 3 pnd3F 3 for n > 8, and predicts many positions and lifetime values of the energy state which are not obtained in theory and experiment up to now, and analyzes the perturbation images between the channels.
- Publication:
-
Optics Communications
- Pub Date:
- April 2008
- DOI:
- 10.1016/j.optcom.2007.12.020
- Bibcode:
- 2008OptCo.281.2107L
