Ultrahigh growth rate of epitaxial silicon by chemical vapor deposition at low temperature with neopentasilane
Abstract
A precursor, neopentasilane, is used to produce high-quality silicon epitaxy by chemical vapor deposition under 700°C with very high growth rates. Low background dopant concentration and excellent crystal quality were determined from secondary-ion-mass spectroscopy and cross sectional transmission electron microscopy. Growth rates as high as 130nm/min at 600°C have been achieved. Growth rates in nitrogen and hydrogen ambients are about equal for neopentasilane, unlike those for growth with low-order silanes. A concerted reaction, where an open site is generated at the same time the adatom is adsorbed, is proposed as a possible mechanism for both the high growth rate with neopentasilane as well as the similar rate with hydrogen and nitrogen carriers.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2008
- DOI:
- 10.1063/1.2897325
- Bibcode:
- 2008ApPhL..92k3506C
- Keywords:
-
- 68.55.ag;
- 81.15.Gh;
- 68.43.Mn;
- 82.65.+r;
- 61.72.uf;
- Semiconductors;
- Chemical vapor deposition;
- Adsorption/desorption kinetics;
- Surface and interface chemistry;
- heterogeneous catalysis at surfaces;
- Ge and Si