Raman spectroscopy of graphene and graphite: Disorder, electron phonon coupling, doping and nonadiabatic effects
Abstract
We review recent work on Raman spectroscopy of graphite and graphene. We focus on the origin of the D and G peaks and the second order of the D peak. The G and 2D Raman peaks change in shape, position and relative intensity with number of graphene layers. This reflects the evolution of the electronic structure and electron-phonon interactions. We then consider the effects of doping on the Raman spectra of graphene. The Fermi energy is tuned by applying a gate-voltage. We show that this induces a stiffening of the Raman G peak for both holes and electrons doping. Thus Raman spectroscopy can be efficiently used to monitor number of layers, quality of layers, doping level and confinement.
- Publication:
-
Solid State Communications
- Pub Date:
- July 2007
- DOI:
- 10.1016/j.ssc.2007.03.052
- Bibcode:
- 2007SSCom.143...47F