Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?
Abstract
We develop a nucleation-based model to explain the formation of the wurtzite phase during the catalyzed growth of freestanding nanowires of zinc blende semiconductors. We show that in vapor-liquid-solid nanowire growth, nucleation generally occurs preferentially at the triple phase line. This entails major differences between zinc blende and wurtzite nuclei. Depending on the pertinent interface energies, wurtzite nucleation is favored at high liquid supersaturation. This explains our systematic observation of zinc blende during early growth of gold-catalyzed GaAs nanowires.
- Publication:
-
Physical Review Letters
- Pub Date:
- October 2007
- DOI:
- 10.1103/PhysRevLett.99.146101
- arXiv:
- arXiv:0706.0846
- Bibcode:
- 2007PhRvL..99n6101G
- Keywords:
-
- 68.65.La;
- 64.60.Qb;
- 64.70.Nd;
- 81.15.Kk;
- Quantum wires;
- Nucleation;
- Structural transitions in nanoscale materials;
- Vapor phase epitaxy;
- growth from vapor phase;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages with 4 figures Submitted to Physical Review Letters