Hidden Charge 2e Boson in Doped Mott Insulators
Abstract
We construct the low-energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a charge 2e bosonic field emerges at low energy. The charge 2e boson mediates dynamical spectral weight transfer across the Mott gap and creates a new charge e excitation by binding a hole. The result is a bifurcation of the electron dispersion below the chemical potential as observed recently in angle-resolved photoemission on Pb-doped Bi2Sr2CaCu2O8+δ (Pb2212).
- Publication:
-
Physical Review Letters
- Pub Date:
- July 2007
- DOI:
- 10.1103/PhysRevLett.99.046404
- arXiv:
- arXiv:cond-mat/0612130
- Bibcode:
- 2007PhRvL..99d6404L
- Keywords:
-
- 71.27.+a;
- Strongly correlated electron systems;
- heavy fermions;
- Condensed Matter - Strongly Correlated Electrons;
- High Energy Physics - Theory
- E-Print:
- 4 pages, 2 figures: To appear in PRL. Revisions include a derivation of the electron operator at low energies which reveals a branching structure seen recently in ARPES on Bi2212