Electrical Spin Injection and Threshold Reduction in a Semiconductor Laser
Abstract
A spin-polarized vertical-cavity surface-emitting laser is demonstrated with electrical spin injection from an Fe/Al0.1Ga0.9As Schottky tunnel barrier. Laser operation with a spin-polarized current results in a maximum threshold current reduction of 11% and degree of circular polarization of 23% at 50 K. A cavity spin polarization of 16.8% is estimated from spin-dependent rate equation analysis of the observed threshold reduction.
- Publication:
-
Physical Review Letters
- Pub Date:
- April 2007
- DOI:
- 10.1103/PhysRevLett.98.146603
- Bibcode:
- 2007PhRvL..98n6603H
- Keywords:
-
- 72.25.Hg;
- 42.55.Px;
- 72.25.Mk;
- 72.25.Pn;
- Electrical injection of spin polarized carriers;
- Semiconductor lasers;
- laser diodes;
- Spin transport through interfaces;
- Current-driven spin pumping