Effect of GaInP intermediate barrier in 1.3 μm compressive-strained GaInAsP/GaInAsP multiple-quantum-wells laser diodes
In this article, 1.3 μm Ga 0.27In 0.63As 0.67P 0.33/Ga 0.11In 0.89As 0.24P 0.76 compressive-strain multiple-quantum-wells (CS-MQWs) with Ga 0.09In 0.91P intermediate barrier (IB) laser diodes (LDs) have been grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The photoluminescence (PL) measurement indicates that the CS-MQWs with 20 Å Ga 0.09In 0.91P IB have the narrowest full width at half maximum (FWHM) of 43.9 meV. The 55-μm-width metal contact and 900-μm cavity length as-cleaved broad-area LDs with the Ga 0.09In 0.91P IB have the better performance than those of LDs without Ga 0.09In 0.91P IB, including a threshold current density of 0.86 kA/cm 2, a differential quantum efficiency of 25.6%, an internal quantum efficiency of 50%, and an internal optical loss of 25 cm -1. Finally, the GaInAsP/GaInAsP CS-MQWs with the Ga 0.09In 0.91P IB LDs were processed as 4-μm-width ridge and an as-cleaved 600-μm-cavity length. It exhibits a threshold current of 38.5 mA, a slope efficiency of 0.16 W/A, a characteristic temperature of 80.5 K, a maximum operating temperature up to 80 °C without power saturation, and a red-shift rate of 0.38 nm/°C, and a relaxation frequency response of 5.8 GHz. The 3-dB bandwidth for the LDs with GaInP IB is as high as 9 GHz without considering the damping factor and coupling loss.