Detecting dilute elements in thin materials using extended X-ray absorption fluorescence spectroscopy (EXAFS) method requires a detector capable of high count rate and low noise. For detection of dilute elements, the fluorescence signal amplitude is often overcome by the presence of noise or background interference. In this paper we have used a gas ionization chamber enhanced by a gas electron multiplier (GEM) to amplify the primary ionized electrons due to the X-ray fluorescence of a dilute element. The GEM provides an essentially noise free electron amplification of the signal primary photoelectrons. It provides a larger output current prior to the electronic amplification, allowing a lower gain amplifier with lower electronic circuit noise contribution and hence improved S/ N ratio. In addition, since the signal is produced only by electrons, and not from ion motion, the detector is capable of recording rapidly changing signals. Iron in an arbitrary tree leaf was used as a test sample. This sample was measured using our detector SUBRSAB, and also with Lytle and passivated implanted planar silicon (PIPS) detectors. An improvement in the signal amplitude by a factor of 20 and a factor of 2 are recorded for the proposed detector with respect to the Lytle and PIPS detectors, respectively. Although the gain in signal over the PIPS detector is small for this detector, its lack of sensitivity to light and its low and temperature-independent dark current are further advantages.