Properties of LuAP:Ce scintillator containing intentional impurities
Abstract
Single crystals of LuAP:Ce and LuYAP(Lu*70%):Ce co-doped with tetravalent (Hf and Zr) and pentavalent (Ta) ions were grown from melts by the Bridgman process. Underlying absorption, slope of the optical edge and transmission in the range of emission were compared to those of LuAP:Ce crystals. Absorption coefficients at 260 nm less than 2 cm -1 have been recorded in LuAP:Ce crystals containing tetravalent ions that are lower than the corresponding figures (5-6 cm -1) measured in undoped LuAP. At high concentrations of added impurities, despite of suppression of the parasitic underlying absorption below 300 nm, the slope of the optical edge and transmission in the range of emission are seriously damaged. Scintillation parameters of crystals with added impurities are compared to those of LuAP:Ce.
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- February 2007
- DOI:
- 10.1016/j.nima.2006.10.093
- Bibcode:
- 2007NIMPA.571..325P
- Keywords:
-
- 81.10.-h;
- 61.72.-S;
- 29.40.-M;
- Methods of crystal growth;
- physics of crystal growth
