A resist for extreme ultraviolet (EUV) lithography requires a small line edge roughness (LER) and a high sensitivity. The achievements of a small LER and a high sensitivity are discussed. One of the candidates for an EUV resist is a main-chain-decomposition-type chemically amplified (CA) resist, such as a methacrylate resist. As a result of outgassing-mass analysis of a methacrylate resist under EUV exposure, we confirmed that the main chain decomposed and this resist has a low outgassing rate compared with an ESCAP-type resist which is a high-annealing-temperature-type CA resist. Another candidate is a photo acid generator (PAG)-bonded CA resist, which has an advantage of a uniform density distribution in the resist system. This resist has an E0 sensitivity of 1.9 mJ/cm2 and a low outgassing rate under EUV exposure. Furthermore, a PAG-bonded resist has a LER of 3 nm (3σ) and a resolution of 30 nm under electron beam (EB) exposure. It is expected that a PAG-bonded CA resist has a good capability to achieve a small LER and high sensitivity for an EUV resist of a 32 nm node.