The use of electron backscatter diffraction to measure the elastic strain fields in a misfit dislocation-free InGaAsP/InP heterostructure
Elastic strain fields at the interface of the epilayer and buffer layer of the InGaAsP/InP heterostructure were characterized by electron backscatter diffraction (EBSD) technology based on scanning electron microscopy. The InGaAsP/InP heterostructure which contained lattice misfit was under a dislocation-free condition. Image quality (IQ) was used as the strain sensitive parameter. From the image quality map and image quality curve, we observed directly the distribution of the elastic strain fields at the interface along the direction perpendicular to the interface as well as the interface structure between the epilayer and buffer layer by transmission electron microscopy and high resolution transmission microscopy.