The effect of the annealing ramp rate on the formation of voids in silicon
Abstract
We show the strong dependence on annealing ramp rate of residual open-volume defects in silicon following helium ion implantation and annealing. Helium was implanted at 60 keV energy, 1 × 1016 cm-2 fluence into silicon and subsequently annealed to 800 °C for 30 min, with ramp rates ranging from 1 to 100 °C s-1. The residual defect distribution was probed by means of positron annihilation spectroscopy and ion channeling, with results demonstrating a strong dependence on the ramp rate. For these conditions, open-volume defects to which the positron technique is sensitive are present in significant concentrations only for annealing ramp rates greater than 5 °C s-1.
- Publication:
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Journal of Physics Condensed Matter
- Pub Date:
- November 2007
- DOI:
- 10.1088/0953-8984/19/46/466202
- Bibcode:
- 2007JPCM...19T6202R