Prediction of lateral barrier height in identically prepared Ni/ n-type GaAs Schottky barrier diodes
Abstract
We have identically prepared Ni/ n-GaAs/In Schottky barrier diodes (SBDs) with doping density of 7.3 × 10 15 cm -3. The barrier height for the Ni/ n-GaAs/In SBDs from the current-voltage characteristics have varied from 0.835 to 0.856 eV, and ideality factor n from 1.02 to 1.08. We have determined a lateral homogeneous barrier height value of 0.862 eV for the Ni/ n-GaAs/In SBD from the experimental linear relationship between barrier heights and ideality factors.
- Publication:
-
Applied Surface Science
- Pub Date:
- July 2007
- DOI:
- 10.1016/j.apsusc.2007.03.029
- Bibcode:
- 2007ApSS..253.7467D
