Resistance switching of copper doped MoOx films for nonvolatile memory applications
Abstract
Nonvolatile and reversible resistance switching of copper doped MoOx film was studied. Hysteretic-type resistive switching was observed under dc. Reproducible resistance switching over 106cycles was observed under alternative voltage pulses. Two resistance states can be maintained for 25h at 85°C. The authors proved that resistance switching might be strongly related with the rupture and generation of multifilaments confirmed by spreading resistance images of a conducting atomic force microscope as well as filamentary conduction by double logarithmic plots. Based on the x-ray photoelectron spectroscopy analysis, local conducting filaments could be formed by thermally diffused copper into MoOx film from the bottom electrode.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2007
- DOI:
- 10.1063/1.2715002
- Bibcode:
- 2007ApPhL..90l2104L
- Keywords:
-
- 73.61.Ng;
- 66.30.Jt;
- 79.60.Dp;
- 68.37.Ps;
- 84.30.Sk;
- Insulators;
- Diffusion of impurities;
- Adsorbed layers and thin films;
- Atomic force microscopy;
- Pulse and digital circuits