We report transport measurements through an in-plane-gate quantum dot transistor (IPGQDT). Our IPGQDT has etched trench isolation between the two-dimensional electron gas QD and IPGs, and it operates in enhancement mode. At relatively small IPG biases, we observe negative differential resistance (NDR) in the current-voltage characteristics. The position of the NDR peak is controlled systematically by the change of the IPG bias. At large biases, the IPGQDT exhibits single-electron tunneling. All of these transport data are not sample specific and consistent with the size of the QD.
Physica E Low-Dimensional Systems and Nanostructures
- Pub Date:
- May 2006
- Electronic transport in mesoscopic systems;
- Single electron devices;
- III-V semiconductor-to-semiconductor contacts p-n junctions and heterojunctions