Effect of V +5 doping on Structural and Dielectric properties of SrBi 2Nb 2O 9 Synthesized at low Temperature
In this article, we report on successful preparation of single phase doped SrBi 2Nb 2O 9 (SBN) ceramics at lower synthesis temperature and a systematic study on effect of partial substitution of Nb +5 (B-site) by V +5 on the lattice constants, microstructure, dielectric, and electrical properties of SBN ferroelectric ceramics. The dielectric and electrical characterization of Vanadium (V +5) doped SBN ceramics have been made in the frequency range of 100 Hz-1 MHz and in the temperature range 400-500 °C. Vanadium doped SBN ceramics have been found to exhibit strong low frequency dielectric dispersion in 100 Hz-100 KHz frequency range at various temperatures. Substituting Nb +5 by much smaller V +5 cation resulted in an increased “rattling space” leading to a higher curie temperature.