Hole Mobility in Ultrathin Body SOI pMOSFETs With SiGe or SiGeC Channels Hallstedt, J. ; Haartman, M. V. ; Hellstrom, P. -E. ; Ostling, M. ; Radamsson, H. H. Abstract Publication: IEEE Electron Device Letters Pub Date: June 2006 DOI: 10.1109/LED.2006.874763 Bibcode: 2006IEDL...27..466H