Electrically detected magnetic resonance in ion-implanted Si:P nanostructures
Abstract
The authors present the results of electrically detected magnetic resonance (EDMR) experiments on ion-implanted Si:P nanostructures at 5K, consisting of high-dose implanted metallic leads with a square gap, in which phosphorus is implanted at a nonmetallic dose corresponding to 1017cm-3. By restricting this secondary implant to a 100×100nm2 region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.
- Publication:
-
Applied Physics Letters
- Pub Date:
- October 2006
- DOI:
- 10.1063/1.2358928
- arXiv:
- arXiv:cond-mat/0605516
- Bibcode:
- 2006ApPhL..89r2115M
- Keywords:
-
- 76.30.-v;
- Electron paramagnetic resonance and relaxation;
- Condensed Matter - Materials Science;
- Condensed Matter - Other
- E-Print:
- 9 pages, 3 figures