Low temperature metallic state induced by electrostatic carrier doping of SrTiO3

Transport properties of Sr_TiO3-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below R_◻∼10k_{Ω at low temperatures, with carrier mobility exceeding 1000^cm2/Vs. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior (dR /dT>0). Results demonstrate an insulator to metal transition in SrTiO3} driven by electrostatic carrier density control.