Bias-crafted magnetic tunnel junctions with bistable spin-dependent states
Abstract
The authors have observed stable, reversible two-resistance states with substantial tunneling magnetoresistances of opposite signs in La0.7Sr0.3MnO3/SrTiO3/Co1-xCrx junctions. Electron energy loss spectroscopy studies reveal the segregation and oxidation of electrochemically reactive chromium at that interface, resulting in oxygen vacancies in the oxide barrier. Bias-induced switching between the two junction states is argued to reflect the incidence of these barrier defects at and near the electrically unstable SrTiO3/Co1-xCrx interface. This affirms bias crafting as an additional lever in spintronic research across semiconducting spacers.
- Publication:
-
Applied Physics Letters
- Pub Date:
- September 2006
- DOI:
- 10.1063/1.2345592
- Bibcode:
- 2006ApPhL..89j3517B
- Keywords:
-
- 75.70.Cn;
- 75.47.-m;
- 75.60.-d;
- 64.75.+g;
- 81.65.Mq;
- Magnetic properties of interfaces;
- Magnetotransport phenomena;
- materials for magnetotransport;
- Domain effects magnetization curves and hysteresis;
- Solubility segregation and mixing;
- phase separation;
- Oxidation