Hexagonal diamond synthesis on h-GaN strained films
Abstract
Chemical vapor deposited diamond films grown on strained gallium nitride-coated quartz substrate are found to display a dominantly hexagonal diamond phase. The phase identification is done using Raman spectroscopy and orientation imaging microscopy (OIM). The presence of a 1324.4cm-1 band in the Raman spectra is attributed to a hexagonal diamond symmetry, but the unambiguous signature of the hexagonal phase is confirmed by OIM. A phase map of the sample clearly shows that 88% of the scanned sample area is hexagonal diamond.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 2006
- DOI:
- 10.1063/1.2218043
- Bibcode:
- 2006ApPhL..89g1911M
- Keywords:
-
- 81.15.Gh;
- 78.30.Am;
- 68.55.-a;
- 68.60.Bs;
- Chemical vapor deposition;
- Elemental semiconductors and insulators;
- Thin film structure and morphology;
- Mechanical and acoustical properties