Two-dimensional current percolation in nanocrystalline vanadium dioxide films
Abstract
Simultaneous measurements of the transmittance and the resistance were carried out on 20-nm-thick VO2 wires during the semiconductor-to-metal transition (SMT). They reveal an offset between the effective electrical and optical switching temperatures. This shift is due to current percolation through a network of nanometer-scale grains of different sizes undergoing a SMT at distinct temperatures. An effective-medium approximation can model this behavior and proves to be an indirect method to calculate the surface coverage of the films.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2006
- DOI:
- Bibcode:
- 2006ApPhL..88h1902R
- Keywords:
-
- 73.61.Le;
- 78.66.Li;
- 71.30.+h;
- Other inorganic semiconductors;
- Other semiconductors;
- Metal-insulator transitions and other electronic transitions