Wide-band gap oxide alloy: BeZnO
Abstract
A wide-band gap oxide alloy, BeZnO, is proposed and studied in this letter. The BeZnO films were deposited on sapphire substrates by our hybrid beam deposition growth method. The value of the energy band gap of BeZnO can be efficiently engineered to vary from the ZnO band gap (3.4 eV) to that of BeO (10.6 eV). BeZnO can be used for fabricating films and heterostructures of ZnO-based electronic and photonic devices and for other applications. Changes in the measured energy band gap and lattice constant values with Be content are described for BeZnO alloys.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2006
- DOI:
- 10.1063/1.2168040
- Bibcode:
- 2006ApPhL..88e2103R
- Keywords:
-
- 81.05.Dz;
- 71.20.Nr;
- 68.55.Ac;
- 68.55.Jk;
- II-VI semiconductors;
- Semiconductor compounds;
- Nucleation and growth: microscopic aspects;
- Structure and morphology;
- thickness;
- crystalline orientation and texture