Demonstration of a visible laser on silicon using Eu-doped GaN thin films
Abstract
We report the demonstration of visible laser action on silicon. We have utilized Eu-doped GaN for the active medium within a structure consisting of multiple AlGaN layers grown by molecular-beam epitaxy on a Si substrate. Stimulated emission was obtained at room temperature from Eu3+ at 620 nm, with a threshold of ~117 kW/cm2. Values of modal gain and loss of ~100 and 46 cm-1 were measured. This demonstration indicates that utilizing rare earths a range of lasers on Si can be obtained, covering the UV, visible, and IR regions, thus enabling a significant expansion of optoelectronic and microelectronic integrations.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- September 2005
- DOI:
- 10.1063/1.2037867
- Bibcode:
- 2005JAP....98e6108P
- Keywords:
-
- 42.55.Px;
- 42.60.By;
- 42.60.Da;
- 81.15.Hi;
- 78.45.+h;
- Semiconductor lasers;
- laser diodes;
- Design of specific laser systems;
- Resonators cavities amplifiers arrays and rings;
- Molecular atomic ion and chemical beam epitaxy;
- Stimulated emission