Fluence effect on ion-implanted As diffusion in relaxed SiGe
Abstract
A systematic study on the fluence (5 × 108 - 4 × 1014 cm-2) dependence of ion-implanted As diffusion in relaxed Si1 - xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm-2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 - xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.
- Publication:
-
EPL (Europhysics Letters)
- Pub Date:
- November 2005
- DOI:
- 10.1209/epl/i2005-10257-1
- Bibcode:
- 2005EL.....72..416L