Transverse "resistance overshoot" in a Si/SiGe twodimensional electron gas in the quantum Hall effect regime
Abstract
We investigate the peculiarities of the "overshoot" phenomena in the transverse Hall resistance R_{xy} in Si/SiGe. Near the low magneticfield end of the quantum Hall effect plateaus, when the filling factor ν approaches an integer i, R_{xy} overshoots the normal plateau value h/ie^{2}. However, if magnetic field B increases further, R_{xy} decreases to its normal value. It is shown that in the investigated sample nSi/Si_{0.7}Ge_{0.3}, overshoots exist for almost all ν. Existence of overshoot in R_{xy} observed in different materials and for different ν, where splitting of the adjacent Landau bands has different character, hints at the common origin of this effect. Comparison of the experimental curves R_{xy}(ν) for ν = 3 and ν = 5 with and without overshoot showed that this effect exists in the whole interval between plateaus, not only in the region where R_{xy} exceeds the normal plateau value.
 Publication:

EPL (Europhysics Letters)
 Pub Date:
 March 2005
 DOI:
 10.1209/epl/i2004104544
 arXiv:
 arXiv:condmat/0502094
 Bibcode:
 2005EL.....69..997S
 Keywords:

 Condensed Matter  Mesoscale and Nanoscale Physics
 EPrint:
 3 pages, 5 EPS figures